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savantic semiconductor product specification silicon npn power transistors BU908 d escription with to-3pn package high voltage high speed switching applications for color tv horizontal deflection circuits. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a p t total power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU908 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0; 700 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =3.2a;i b =0.8a 2.0 v v besat base-emitter saturation voltage i c =3.2a;i b =0.8a 1.3 v i cbo collector cut-off current v cb =1500v;i e =0 1.0 ma i ebo emitter cut-off current v eb =5v;i c =0 0.1 ma h fe dc current gain i c =1.5a ; v ce =5v 8 f t transition frequency i e =0 ; v cb =10v;f=1mhz 7 mhz
savantic semiconductor product specification 3 silicon npn power transistors BU908 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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